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Researchers develop new fast-writing high-density MRAM tech, seek commercialization

posted Nov 12, 2012, 1:44 PM by Ben Melton - Researchers from the University of Virginia have developed a novel technology using MRAM for short- and long- term storage solutions. This device uses a spinning torque current to change the magnetization of each memory domain to achieve higher memory bit density and faster writing speeds. These memory domains are allocated along the memory line and a multi-ferroic element near each domain provides magnetization stability when a voltage is not being applied.